| Date | Title of Conference or Institution | Level | Title/Subject of presentation (if made) | Document Attach | Activity Date |
| 2017-12-11 | XIX INTERNATIONAL WORKSHOP ON PHYSICS OF SEMICONDUCTOR DEVICES (IWPSD-2017)”, INDIAN INSTITUTE OF TECHNOLOGY, NEW DELHI, INDIA. | National | “STUDY OF THERMALLY ANNEALED GASBBI QUANTUM DOTS GROWN ON GAAS BY LIQUID PHASE EPITAXY” | DOWNLOAD | 2017-12-12 |
| 2017-03-08 | “International symposium on semiconductor materials and devices”(ISSMD-4) School of Material Science and Nanotechnology, Jadavpur University, Kolkata, India. | National | Bandgap reduction of InP and GaSb epitaxial layers containing Bi | DOWNLOAD | 2017-03-10 |
| 2017-02-16 | “SECOND INTERNATIONAL CONFERENCE ON MATERIAL SCIENCE(ICMS-2017), DEPT. OF PHYSICS, TRIPURA UNIVERSITY, TRIPURA, INDIA. | National | EVIDENCE OF BI RELATED DEFECT STATES IN INPBI LAYERS, GROWN BY LIQUID PHASE EPITAXY | DOWNLOAD | 2018-02-16 |
| 2015-12-16 | “6th International Conference Computers and Devices for Communication (CODEC-2015)” , Institute of Radio Physics and Electronics, University of Calcutta, Kolkata. | National | “calculation of Refractive Index of Some Group III-V Semiconductor Materials at Energies below Bandgap” | DOWNLOAD | 2015-12-18 |
| 2015-12-07 | 18th International Workshop on Physics of Semiconductor Devices (IWPSD-2015)”, IISC Bangalore, India. | National | “Investigation of the below gap infrared absorption properties of GaSbBi epitaxial layers grown on GaSb substrate” | DOWNLOAD | 2015-12-08 |